- 专利标题: Inorganic dies with organic interconnect layers and related structures
-
申请号: US17338296申请日: 2021-06-03
-
公开(公告)号: US11621192B2公开(公告)日: 2023-04-04
- 发明人: Aleksandar Aleksov , Feras Eid , Telesphor Kamgaing , Georgios Dogiamis , Johanna M. Swan
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Akona IP PC
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/00
摘要:
Disclosed herein are methods to fabricate inorganic dies with organic interconnect layers and related structures and devices. In some embodiments, an integrated circuit (IC) structure may be formed to include an inorganic die and one or more organic interconnect layers on the inorganic die, wherein the organic interconnect layers include an organic dielectric. An example method includes forming organic interconnect layers over an inorganic interconnect substrate and forming passive components in the organic interconnect layer. The organic interconnect layers comprise a plurality of conductive metal layers through an organic dielectric material. The plurality of conductive metal layers comprises electrical pathways. the passive components are electrically coupled to the electrical pathways.
公开/授权文献
信息查询
IPC分类: