- 专利标题： Semiconductor device and manufacturing method of the semiconductor device
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申请号： US17243270申请日： 2021-04-28
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公开(公告)号： US11610915B2公开(公告)日： 2023-03-21
- 发明人: Sang Yong Lee , Sang Min Kim , Jung Ryul Ahn , Sang Hyun Oh , Seung Bum Cha , Kang Sik Choi
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si Gyeonggi-do
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si Gyeonggi-do
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2018-0027463 20180308
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L25/065 ; H01L27/06 ; H01L27/11556
摘要：
A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.
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