- 专利标题： Dual in-line memory module (DIMM) socket circuit to detect improper insertion of a DIMM edge into a DIMM socket
-
申请号： US17031800申请日： 2020-09-24
-
公开(公告)号： US11588279B2公开(公告)日： 2023-02-21
- 发明人: Xiang Li , George Vergis
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Compass IP Law PC
- 主分类号： H01R13/62
- IPC分类号： H01R13/62 ; H01R13/66 ; H01R12/73 ; H01R13/635
摘要：
An apparatus is described. The apparatus includes a dual-in line memory module (DIMM) socket having a first electrical circuit component embedded in a latch of the DIMM socket. The first electrical circuit component has a first exposed electrical contact that is to contact or not contact a second exposed electrical contact of a second electrical circuit component that is embedded in a housing of the socket depending on whether a corner of a DIMM is or is not properly inserted into the DIMM socket.
公开/授权文献
信息查询
