- 专利标题: Semiconductor device including a content reference memory
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申请号: US17318632申请日: 2021-05-12
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公开(公告)号: US11551755B2公开(公告)日: 2023-01-10
- 发明人: Makoto Yabuuchi
- 申请人: RENESAS ELECTRONICS CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JPJP2020-095806 20200601
- 主分类号: G11C15/00
- IPC分类号: G11C15/00 ; G11C15/04 ; G11C8/08 ; G11C7/12 ; G11C7/06
摘要:
A semiconductor device includes a plurality of memory cells connected to a match line; a word line driver connected to a word line; a valid cell configured to store a valid bit indicating valid or invalid of an entry; a first precharge circuit connected to one end of the match line and configured to precharge the match line to a high level; and a second precharge circuit connected to the other end of the match line and configured to precharge the match line to a high level. The plurality of memory cells are arranged between the first precharge circuit and the second precharge circuit, and the second precharge circuit is arranged between the word line driver and the plurality of memory cells.
公开/授权文献
- US20210375362A1 SEMICONDUCTOR DEVICE 公开/授权日:2021-12-02
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