- 专利标题: Non-volatile memory device and method for fabricating the same
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申请号: US16793930申请日: 2020-02-18
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公开(公告)号: US11532716B2公开(公告)日: 2022-12-20
- 发明人: Chia-Wen Wang , Chien-Hung Chen , Chia-Hui Huang , Jen Yang Hsueh , Ling Hsiu Chou , Chih-Yang Hsu
- 申请人: United Microelectronics Corp.
- 申请人地址: TW Hsinchu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Hsinchu
- 代理机构: J.C. Patents
- 优先权: CN202010022120.7 20200109
- 主分类号: H01L29/423
- IPC分类号: H01L29/423 ; H01L27/11521 ; H01L29/51 ; H01L29/788 ; H01L21/762 ; H01L21/28 ; H01L29/66 ; G11C16/16 ; G11C16/14
摘要:
A non-volatile memory device includes a substrate. A plurality of shallow trench isolation (STI) lines are disposed on the substrate and extend along a first direction. A memory gate structure is disposed on the substrate between adjacent two of the plurality of STI lines. A trench line is disposed in the substrate and extends along a second direction intersecting the first direction, wherein the trench line also crosses top portions of the plurality of STI lines. A conductive line is disposed in the trench line and used as a selection line to be coupled to the memory gate structure.
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