- 专利标题: Fringe capacitor arranged based on metal layers with a selected orientation of a preferred direction
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申请号: US17239884申请日: 2021-04-26
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公开(公告)号: US11532546B2公开(公告)日: 2022-12-20
- 发明人: Viet Thanh Dinh , Bartholomeus Wilhelmus Christiaan Hovens , Marina Vroubel
- 申请人: NXP B.V.
- 申请人地址: NL Eindhoven
- 专利权人: NXP B.V.
- 当前专利权人: NXP B.V.
- 当前专利权人地址: NL Eindhoven
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L49/02 ; H01L27/08
摘要:
A fringe capacitor comprises a plurality of unidirectional metal layers, wherein an orientation of a preferred direction of each of the unidirectional metal layers is in a same direction. First fingers of the fringe capacitor are formed in a first layer of the unidirectional metal layers, the first fingers being interdigitated and having a direction parallel to the orientation of the preferred direction. Second fingers of the fringe capacitor are formed in a second layer of the unidirectional metal layers, the second fingers being interdigitated and having a direction parallel to the orientation of the preferred direction, the first layer and the second layer separated by at least a layer of not having the orientation of the preferred direction and not having fingers of the fringe capacitor.
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