- 专利标题： Method for forming semiconductor structure
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申请号： US17017569申请日： 2020-09-10
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公开(公告)号： US11532511B2公开(公告)日： 2022-12-20
- 发明人: Gung-Pei Chang , Yao-Wen Chang , Hai-Dang Trinh
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT
- 代理商 Anthony King
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L21/768 ; H01L21/285 ; H01L21/02 ; H01L21/311 ; H01L23/00
摘要：
A method for forming a semiconductor structure includes following operations. A first substrate including a first side, a second side opposite to the first side, and a metallic pad disposed over the first side is received. A dielectric structure including a first trench directly above the metallic pad is formed. A second trench is formed in the dielectric structure and a portion of the first substrate. A sacrificial layer is formed to fill the first trench and the second trench. A third trench is formed directly above the metallic pad. A barrier ring and a bonding structure are formed in the third trench. A bonding layer is disposed to bond the first substrate to a second substrate. A portion of the second side of the first substrate is removed to expose the sacrificial layer. The sacrificial layer is removed by an etchant.
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