- 专利标题： Low-resistance contact plugs and method forming same
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申请号： US16985555申请日： 2020-08-05
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公开(公告)号： US11532504B2公开(公告)日： 2022-12-20
- 发明人: Shao-Ming Koh , Chen-Ming Lee , Fu-Kai Yang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/165
- IPC分类号： H01L29/165 ; H01L21/768 ; H01L21/8234 ; H01L27/088 ; H01L21/033 ; H01L29/66 ; H01L21/283 ; H01L29/78 ; H01L21/285
摘要：
A method includes forming a first and a second contact opening to reveal a first and a second source/drain region, respectively, forming a mask layer having a first and a second portion in the first and the second contact openings, respectively, forming a first and a second sacrificial ILD in the first and the second contact openings, respectively, removing the first sacrificial ILD from the first contact opening, filling a filler in the first contact opening, and etching the second sacrificial ILD. The filler protects the first portion of the mask layer from being etched. An ILD is formed in the second contact opening and on the second portion of the mask layer. The filler and the first portion of the mask layer are removed using a wet etch to reveal the first contact opening. A contact plug is formed in the first contact opening.
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