- 专利标题: Method of adjusting operating conditions for semiconductor memory device
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申请号: US17197541申请日: 2021-03-10
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公开(公告)号: US11532368B2公开(公告)日: 2022-12-20
- 发明人: Shinji Suzuki
- 申请人: Kioxia Corporation
- 申请人地址: JP Tokyo
- 专利权人: Kioxia Corporation
- 当前专利权人: Kioxia Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JPJP2020-139918 20200821
- 主分类号: G11C16/34
- IPC分类号: G11C16/34 ; G11C16/10 ; G11C16/24 ; G11C16/32 ; G11C16/30 ; G11C16/26
摘要:
A method of adjusting operating conditions includes: a substrate; first conductive layers; a first semiconductor layers facing the first conductive layers; a second semiconductor layer connected to the first semiconductor layers; and an electric charge accumulating layer disposed between the first conductive layers and the first semiconductor layers. At a predetermined timing of a program operation, the second conductive layer which is one of the first conductive layers is supplied with a program voltage or a write pass voltage. The method executes: a first operation that supplies the second conductive layer with the write pass voltage and supplies a third conductive layer which is one of the plurality of first conductive layers with the program voltage; and a second operation that supplies the second conductive layer with a verify voltage and supplies the third conductive layer with a voltage.
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