- 专利标题: Memory with automatic background precondition upon powerup
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申请号: US16553821申请日: 2019-08-28
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公开(公告)号: US11532358B2公开(公告)日: 2022-12-20
- 发明人: Anthony D. Veches , Debra M. Bell , James S. Rehmeyer , Robert Bunnell , Nathaniel J. Meier
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: G11C11/40
- IPC分类号: G11C11/40 ; G11C14/00 ; G11C17/18 ; G11C11/4072 ; G11C11/4096 ; G11C17/16
摘要:
Memory devices and systems with automatic background precondition upon powerup, and associated methods, are disclosed herein. In one embodiment, a memory device includes a memory array having a plurality of memory cells and a fuse array configured to store precondition data. The precondition data can identify a portion of the memory array, specify a predetermined precondition state, or a combination thereof. When the memory device powers on, the memory device can be configured to automatically retrieve the precondition data from the fuse array and/or to write memory cells in the portion of the memory array to the predetermined precondition state before executing an access command.
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