Invention Grant
- Patent Title: Pellicle and method of manufacturing same
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Application No.: US17692912Application Date: 2022-03-11
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Publication No.: US11526073B2Publication Date: 2022-12-13
- Inventor: Po Hsuan Li , Yu-Ting Lin , Yun-Yue Lin , Huai-Tei Yang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: G03F1/62
- IPC: G03F1/62 ; G03F7/20

Abstract:
A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.
Public/Granted literature
- US20220197132A1 Pellicle and Method of Manufacturing Same Public/Granted day:2022-06-23
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