- 专利标题: Semiconductor device structure for wide supply voltage range
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申请号: US17647475申请日: 2022-01-10
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公开(公告)号: US11522545B1公开(公告)日: 2022-12-06
- 发明人: Pak-Kong Dunn , Wen-Chi Wu , Po Yen Lin , Hai Bin You
- 申请人: Solomon Systech (Shenzhen) Limited
- 申请人地址: CN Shenzhen
- 专利权人: Solomon Systech (Shenzhen) Limited
- 当前专利权人: Solomon Systech (Shenzhen) Limited
- 当前专利权人地址: CN Shenzhen
- 代理机构: S&F/WEHRW
- 优先权: CN202111291049.3 20211102,CN202111649295.1 20211230
- 主分类号: H03K19/0185
- IPC分类号: H03K19/0185 ; H01L29/78 ; H03K3/037
摘要:
A level shifter circuit for translating input signal to output signal is disclosed. The level shifter includes an input stage and a latch stage. The latch stage comprises at least a transistor characterized in a substantially matched transconductance with the input stage for preventing a discrete realization of a voltage clamp circuit. The transistor is a semiconductor device including a source region having a source doping region and a drain region having a first doping region and a second doping region. The first doping region is doped with a first conductivity impurity. The second doping region is disposed around the first doping region so as to surround the first doping region, and is doped with a second conductivity impurity. The second doping region has a higher on-resistance than the first doping region, thereby a high resistive series path is created by the second doping region to mimic an embedded resistor.
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