- 专利标题： Semiconductor device having fins
-
申请号： US16880864申请日： 2020-05-21
-
公开(公告)号： US11515423B2公开(公告)日： 2022-11-29
- 发明人: Shu-Hao Kuo , Jung-Hao Chang , Chao-Hsien Huang , Li-Te Lin , Kuo-Cheng Ching
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/306 ; H01L29/66 ; H01L29/417 ; H01L27/12 ; H01L21/84 ; H01L21/3065 ; H01L29/06 ; H01L21/762 ; H01L21/311 ; H01L21/8238 ; H01L27/092 ; H01L21/02
摘要：
A device includes a semiconductor substrate, a first fin arranged over the semiconductor substrate, and an isolation structure. The first fin includes an upper portion, a bottom portion, and an insulator layer between the upper portion and the bottom portion. A top surface of the insulator layer is wider than a bottom surface of the upper portion of the first fin. The isolation structure surrounds the bottom portion of the first fin.
公开/授权文献
- US20200287047A1 SEMICONDUCTOR DEVICE HAVING FINS 公开/授权日：2020-09-10
信息查询
IPC分类:
