- 专利标题： Semiconductor chip with redundant thru-silicon-vias
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申请号： US15247259申请日： 2016-08-25
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公开(公告)号： US11469212B2公开(公告)日： 2022-10-11
- 发明人: Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
- 申请人： ADVANCED MICRO DEVICES, INC. , ATI TECHNOLOGIES ULC
- 申请人地址： US CA Santa Clara; CA Markham
- 专利权人： ADVANCED MICRO DEVICES, INC.,ATI TECHNOLOGIES ULC
- 当前专利权人： ADVANCED MICRO DEVICES, INC.,ATI TECHNOLOGIES ULC
- 当前专利权人地址： US CA Santa Clara; CA Markham
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L25/065 ; H01L23/00
摘要：
A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.
公开/授权文献
- US20160365335A1 SEMICONDUCTOR CHIP WITH REDUNDANT THRU-SILICON-VIAS 公开/授权日：2016-12-15
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