Error correction circuit of semiconductor memory device and semiconductor memory device including the same
摘要:
An error correction circuit includes ECC encoder and an ECC decoder. The ECC encoder generates, based on a first main data obtained by selectively shifting data bits of a main data based on a LSB of a row address, a parity data using an ECC and stores a codeword including the main data and the parity data in a target page. The ECC decoder generates a syndrome based on a second main data obtained by selectively shifting data bits of the main data based on the LSB of the row address, the parity data and a parity check matrix based on the ECC, and corrects a single bit error or corrects two bit errors when the two bit errors occur in adjacent two memory cells based on the syndrome. The mis-corrected bit is generated when the multiple error bits are present in the main data.
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