- 专利标题: Error correction circuit of semiconductor memory device and semiconductor memory device including the same
-
申请号: US17227582申请日: 2021-04-12
-
公开(公告)号: US11462292B1公开(公告)日: 2022-10-04
- 发明人: Kiheung Kim , Sanguhn Cha , Sungrae Kim , Sunghye Cho
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Muir Patent Law, PLLC
- 主分类号: G11C29/42
- IPC分类号: G11C29/42 ; G11C29/44 ; G11C29/18 ; H03M13/11 ; H03M13/15 ; G11C29/12
摘要:
An error correction circuit includes ECC encoder and an ECC decoder. The ECC encoder generates, based on a first main data obtained by selectively shifting data bits of a main data based on a LSB of a row address, a parity data using an ECC and stores a codeword including the main data and the parity data in a target page. The ECC decoder generates a syndrome based on a second main data obtained by selectively shifting data bits of the main data based on the LSB of the row address, the parity data and a parity check matrix based on the ECC, and corrects a single bit error or corrects two bit errors when the two bit errors occur in adjacent two memory cells based on the syndrome. The mis-corrected bit is generated when the multiple error bits are present in the main data.
信息查询