Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US17019343Application Date: 2020-09-13
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Publication No.: US11450556B2Publication Date: 2022-09-20
- Inventor: Shing-Yih Shih , Chih-Ching Lin
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: CKC & Partners Co., LLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L21/311 ; H01L23/528

Abstract:
A semiconductor structure includes a semiconductor device, an interconnect structure, a dielectric layer, and a redistribution layer (RDL). The interconnect structure is disposed over the semiconductor device. The dielectric layer is disposed over the interconnect structure. The RDL includes a conductive structure over the dielectric layer and a conductive via extending downwards from the conductive structure and through the dielectric layer. The conductive via includes a bottom portion, a top portion and a tapered portion between the bottom and top portions, in which the tapered portion has a width variation greater than that of the bottom and top portions.
Information query
IPC分类: