Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17449079Application Date: 2021-09-27
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Publication No.: US11431326B2Publication Date: 2022-08-30
- Inventor: San Ha Kim , Taek Kyun Shin , Min Su Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2019-0069723 20190613
- Main IPC: H03K3/037
- IPC: H03K3/037 ; G01R31/3183 ; H03K19/20

Abstract:
A semiconductor device includes a scan input circuit, a master latch, a slave latch, a first inverter, and a scan output circuit. The scan input circuit is configured to receive a scan input signal, a first data signal, and a scan enable signal and select any one of the first data signal and the scan input signal in response to the scan enable signal to output a first select signal. The master latch is configured to latch the first select signal and output a first output signal. The slave latch is configured to latch the first output signal and output a second output signal. The first inverter is configured to invert the second output signal. The scan output circuit is configured to receive a signal output from the slave latch and an external signal and output a first scan output signal.
Public/Granted literature
- US20220085797A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-03-17
Information query
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