The present invention provides a magnetoresistance effect element with a high read operation speed, a magnetic memory array, a magnetic memory device, and a write method for a magnetoresistance effect element. A magnetoresistance effect element includes: a heavy metal layer; a magnetic recording unit including a recording layer that includes a ferromagnetic layer that is magnetized in a vertical direction with respect to a film surface and is provided on a front surface of the heavy metal layer, a barrier layer that is provided on a surface of the recording layer which is opposite to the heavy metal layer and is formed from an insulator, and a reference layer which is provided on a surface of the barrier layer which is opposite to the recording layer, and a magnetization of the reference layer is fixed in the vertical direction with respect to a film surface; an insulating layer that is provided on a surface of the heavy metal layer which is opposite to the magnetic recording unit; a first terminal that is connected to the insulating layer at a position facing the recording layer with the heavy metal layer and the insulating layer interposed therebetween and applies a voltage to the heavy metal layer through the insulating layer; a second terminal that is connected to the reference layer; and a third terminal and a fourth terminal which are connected to the heavy metal layer, and cause a write current to flow to the heavy metal layer between the magnetic recording unit and the insulating layer.