- 专利标题： Double spin filter tunnel junction
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申请号： US15298674申请日： 2016-10-20
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公开(公告)号： US11417837B2公开(公告)日： 2022-08-16
- 发明人: Daniel C. Worledge
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Samuel Waldbaum
- 主分类号： H01L43/10
- IPC分类号： H01L43/10 ; H01L43/02 ; H01L43/08 ; H01L43/12 ; G11C11/16 ; H01L27/22
摘要：
A memory device that includes a first magnetic insulating tunnel barrier reference layer present on a first non-magnetic metal electrode, and a free magnetic metal layer present on the first magnetic insulating tunnel barrier reference layer. A second magnetic insulating tunnel barrier reference layer may be present on the free magnetic metal layer, and a second non-magnetic metal electrode may be present on the second magnetic insulating tunnel barrier. The first and second magnetic insulating tunnel barrier reference layers are arranged so that their magnetizations are aligned to be anti-parallel.
公开/授权文献
- US20170098762A1 DOUBLE SPIN FILTER TUNNEL JUNCTION 公开/授权日：2017-04-06
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