- 专利标题： Treatments to enhance material structures
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申请号： US16951858申请日： 2020-11-18
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公开(公告)号： US11417517B2公开(公告)日： 2022-08-16
- 发明人: Srinivas Gandikota , Yixiong Yang , Jacqueline Samantha Wrench , Yong Yang , Steven C. H. Hung
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson + Sheridan LLP
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/28 ; H01L21/67
摘要：
A method of forming a high-K dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-K dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-K dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-K dielectric cap layer, and removing the sacrificial silicon cap layer.
公开/授权文献
- US20210111020A1 TREATMENTS TO ENHANCE MATERIAL STRUCTURES 公开/授权日：2021-04-15
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