- 专利标题: MEMS RF-switch with near-zero impact landing
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申请号: US16343912申请日: 2017-09-14
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公开(公告)号: US11417487B2公开(公告)日: 2022-08-16
- 发明人: Richard L. Knipe , Robertus Petrus Van Kampen , James Douglas Huffman , Lance Barron
- 申请人: CAVENDISH KINETICS, INC.
- 申请人地址: US CA San Jose
- 专利权人: CAVENDISH KINETICS, INC.
- 当前专利权人: CAVENDISH KINETICS, INC.
- 当前专利权人地址: US CA San Jose
- 代理机构: Withrow & Terranova, P.L.L.C.
- 国际申请: PCT/US2017/051536 WO 20170914
- 国际公布: WO2018/063814 WO 20180405
- 主分类号: H01H59/00
- IPC分类号: H01H59/00 ; H01H1/00
摘要:
The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.
公开/授权文献
- US20200185176A1 MEMS RF-SWITCH WITH NEAR-ZERO IMPACT LANDING 公开/授权日:2020-06-11
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