发明授权
- 专利标题： Memory device
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申请号： US16800214申请日： 2020-02-25
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公开(公告)号： US11387251B2公开(公告)日： 2022-07-12
- 发明人: Shigeki Kobayashi , Toru Matsuda , Hanae Ishihara
- 申请人： Kioxia Corporation
- 申请人地址： JP Tokyo
- 专利权人： Kioxia Corporation
- 当前专利权人： Kioxia Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Kim & Stewart LLP
- 优先权： JPJP2019-169365 20190918
- 主分类号： H01L27/11556
- IPC分类号： H01L27/11556 ; H01L27/11582 ; H01L29/26
摘要：
A memory device includes a substrate, first, second, and third conductive layers, a stack of fourth conductive layers, a memory pillar, and an insulator. The first, second, and third conductive layer are provided above the substrate. The stack of fourth conductive layers is provided above the third conductive layer. The memory pillar extends in the thickness direction through the stack and the third conductive layer and into the second conductive layer in a first region of the memory device. The insulator extends in a thickness direction through the stack, the third conductive layer, and the second conductive layer in a second region of the memory device. The insulator also extends in a second surface direction of the substrate. A thickness of the third conductive layer in a region through which the insulator extends is greater than a thickness of the third conductive layer in the first region.
公开/授权文献
- US20210082947A1 MEMORY DEVICE 公开/授权日：2021-03-18
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