Invention Grant
- Patent Title: N-type dopants for efficient solar cells
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Application No.: US16712206Application Date: 2019-12-12
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Publication No.: US11380852B2Publication Date: 2022-07-05
- Inventor: Julia Schneider , Michael L. Chabinyc , Hengbin Wang , Hidenori Nakayama , Kyle D. Clark , Javier Read de Alaniz
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L51/00
- IPC: H01L51/00 ; C07D487/16 ; B82Y30/00 ; C07D487/12 ; H01L51/42 ; H01B1/04

Abstract:
Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250° C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5×10−2 S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI3) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.
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