- 专利标题： Nucleation-free gap fill ALD process
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申请号： US16467669申请日： 2017-11-29
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公开(公告)号： US11289374B2公开(公告)日： 2022-03-29
- 发明人: Yihong Chen , Kelvin Chan , Xinliang Lu , Srinivas Gandikota , Yong Wu , Susmit Singha Roy , Chia Cheng Chin
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Servilla Whitney LLC
- 国际申请： PCT/US2017/063611 WO 20171129
- 国际公布： WO2018/111547 WO 20180621
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/768 ; C23C16/02 ; C23C16/455 ; C23C16/458 ; H01L21/285 ; H01L21/687 ; H01L23/532
摘要：
Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.
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