- 专利标题： Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound
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申请号： US16420956申请日： 2019-05-23
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公开(公告)号： US11281099B2公开(公告)日： 2022-03-22
- 发明人: Hiroto Yamazaki , Masatoshi Arai , Yoshitaka Komuro
- 申请人： TOKYO OHKA KOGYO CO., LTD.
- 申请人地址： JP Kawasaki
- 专利权人： TOKYO OHKA KOGYO CO., LTD.
- 当前专利权人： TOKYO OHKA KOGYO CO., LTD.
- 当前专利权人地址： JP Kawasaki
- 代理机构： Knobbe Martens Olson & Bear LLP
- 优先权： JPJP2018-101876 20180528
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; C07C381/12 ; G03F7/039 ; C07C309/12 ; C07C303/22 ; C07D339/08 ; C07D333/54 ; C07D327/04 ; G03F7/038 ; G03F7/32 ; G03F7/16 ; G03F7/20 ; G03F7/38
摘要：
A resist composition including a compound represented by formula (b1) in which Rb1 represents an aryl group which may have a substituent; Rb2 and Rb3 each independently represents an aryl group which may have a substituent or an alkyl group which may have a substituent; provided that at least one of the aryl group represented by Rb1 and the aryl group or the alkyl group represented by Rb2 or Rb3 has a substituent containing a halogen atom, and at least one of the aryl group represented by Rb1 and the aryl group or the alkyl group represented by Rb2 or Rb3 has a substituent containing a sulfonyl group; and X− represents a counteranion.
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