Exemplary processing methods may include forming a first deposition plasma of a silicon-and-nitrogen-containing precursor. The methods may include depositing a first portion of a silicon nitride material on a semiconductor substrate with the first deposition plasma. A first treatment plasma of a helium-and-nitrogen-containing precursor may be formed to treat the first portion of the silicon nitride material with the first treatment plasma. A second deposition plasma may deposit a second portion of a silicon nitride material, and a second treatment plasma may treat the second portion of the silicon nitride material. A flow rate ratio of helium-to-nitrogen in the first treatment plasma may be lower than a He/N2 flow rate ratio in the second treatment plasma. A first power level from a plasma power source that forms the first treatment plasma may be lower than a second power level that forms the second treatment plasma.