- 专利标题： Vertical tunnel field-effect transistor with U-shaped gate and band aligner
-
申请号： US16141383申请日： 2018-09-25
-
公开(公告)号： US11245011B2公开(公告)日： 2022-02-08
- 发明人: Jiun-Yun Li , Pao-Chuan Shih , Wei-Chih Hou
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd. , National Taiwan University
- 申请人地址： TW Hsinchu; TW Taipei
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.,National Taiwan University
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.,National Taiwan University
- 当前专利权人地址： TW Hsinchu; TW Taipei
- 代理机构： Seed IP Law Group LLP
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/78 ; H01L29/20 ; H01L29/73 ; H01L29/66 ; H01L29/423
摘要：
The current disclosure describes a new vertical tunnel field-effect transistor (TFET). The TFET includes a source layer over a substrate. A first channel layer is formed over the source layer. A drain layer is stacked over the first channel layer with a second channel layer stacked therebetween. The drain layer and the second channel layer overlap a first surface portion of the first channel layer. A gate structure is positioned over the channel layer by a second surface portion of the channel layer and contacts a sidewall of the second channel layer.
公开/授权文献
信息查询
IPC分类:
