发明授权
- 专利标题： Semiconductor memory device and method of operating the semiconductor memory device
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申请号： US16888057申请日： 2020-05-29
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公开(公告)号： US11244960B2公开(公告)日： 2022-02-08
- 发明人: Kun Young Lee , Sun Young Kim , Jae Gil Lee
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2019-0126163 20191011
- 主分类号： H01L27/11597
- IPC分类号： H01L27/11597 ; H01L27/1159
摘要：
The present technology includes a semiconductor memory device. The semiconductor memory device includes a stack including a conductive pattern and an insulating pattern, a channel structure penetrating the stack, and a memory pattern between the conductive pattern and the channel structure. The memory pattern includes a blocking pattern, a tunnel pattern, a storage pattern, and a ferroelectric pattern.
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