- 专利标题： Semiconductor device and method of forming the same
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申请号： US16136265申请日： 2018-09-20
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公开(公告)号： US11244829B2公开(公告)日： 2022-02-08
- 发明人: Feng-Yi Chang , Yu-Cheng Tung , Fu-Che Lee
- 申请人： UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- 申请人地址： TW Hsin-Chu; CN Quanzhou
- 专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu; CN Quanzhou
- 代理商 Winston Hsu
- 优先权： CN201810875849.1 20180803
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/033 ; H01L27/108 ; H01L21/3213
摘要：
A semiconductor device and a method of forming the same, the semiconductor includes a substrate and a material disposed on the substrate. The material layer includes plural first patterns arranged parallel and separately in an array within a first region of the substrate, and plural second patterns parallel and separately disposed at two opposite sides of the first patterns, and plural third patterns parallel and separately disposed at another two opposite sides of the first patterns, wherein each of the third patterns has a relative greater dimension than that of each of the first patterns.
公开/授权文献
- US20200043733A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 公开/授权日：2020-02-06
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