- 专利标题: Ion milling device and ion source adjusting method for ion milling device
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申请号: US16961759申请日: 2018-02-28
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公开(公告)号: US11244802B2公开(公告)日: 2022-02-08
- 发明人: Hitoshi Kamoshida , Hisayuki Takasu , Atsushi Kamino , Toru Iwaya
- 申请人: Hitachi High-Tech Corporation
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Tech Corporation
- 当前专利权人: Hitachi High-Tech Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Crowell & Moring LLP
- 国际申请: PCT/JP2018/007477 WO 20180228
- 国际公布: WO2019/167165 WO 20190906
- 主分类号: H01J37/08
- IPC分类号: H01J37/08 ; H01J37/147 ; H01J37/20 ; H01J37/244 ; H01J37/305
摘要:
By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.
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