- 专利标题： Methods and systems to enhance process uniformity
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申请号： US15581446申请日： 2017-04-28
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公开(公告)号： US11239061B2公开(公告)日： 2022-02-01
- 发明人: Saravjeet Singh , Alan Tso , Jingchun Zhang , Zihui Li , Hanshen Zhang , Dmitry Lubomirsky
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01L21/67
摘要：
A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.
公开/授权文献
- US20170229291A1 METHODS AND SYSTEMS TO ENHANCE PROCESS UNIFORMITY 公开/授权日：2017-08-10
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