公开(公告)号：US20170229291A1

公开(公告)日：2017-08-10

申请号：US15581446

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Saravjeet Singh ,  Alan Tso ,  Jingchun Zhang ,  Zihui Li ,  Hanshen Zhang ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32724 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32715 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069

Abstract: A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

公开(公告)号：US20160068969A1

公开(公告)日：2016-03-10

申请号：US14479030

申请日：2014-09-05

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Alan Tso ,  Anchuan Wang ,  Nitin K. Ingle ,  Hiroshi Hamana

IPC: C23F4/00 ,  H01J37/32

CPC classification number: H01J37/32733 ,  H01J37/32357 ,  H01J37/32853 ,  H01J37/32862 ,  H01L21/02063 ,  H01L21/02071

Abstract: Methods of preventing microcontamination from developing on substrates when the substrates are removed from a substrate processing system are described. During processing in the substrate processing mainframe, fluorine adatoms are present (perhaps left by a prior process in the mainframe) on the surface of the substrate. The fluorine adatoms develop into microcontamination upon exposure to typical atmospheric conditions. A hydrogen-containing precursor is flowed into a remote plasma region to form plasma effluents. The plasma effluents are flowed into a substrate processing region to remove or react with the fluorine adatoms in a treatment operation. Following the treatment operation, the concentration of fluorine on or near the surface is reduced and the development of microcontamination after breaking vacuum is curtailed.

Abstract translation: 描述了当从基板处理系统移除基板时防止微粒化在基板上显影的方法。 在基板处理主机中的处理期间，在基板的表面上存在氟吸附原子（可能留在主机中的先前处理过程）。 氟吸附原子在暴露于典型的大气条件下会发展成微生物。 含氢前体流入远程等离子体区域以形成等离子体流出物。 在处理操作中，等离子体流出物流入基底处理区域以除去或与氟吸附原子反应。 在处理操作之后，表面上或附近的氟浓度降低，并且减少了真空后的微生物的发展。

公开(公告)号：US11581165B2

公开(公告)日：2023-02-14

申请号：US17157224

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Saravjeet Singh ,  Kenneth D. Schatz ,  Alan Tso ,  Marlin Wijekoon ,  Dimitri Kioussis

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311

Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.

公开(公告)号：US20230197416A1

公开(公告)日：2023-06-22

申请号：US18168467

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Saravjeet Singh ,  Kenneth D. Schatz ,  Alan Tso ,  Marlin Wijekoon ,  Dimitri Kioussis

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32862 ,  H01L21/02049 ,  H01L21/31116

Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.

公开(公告)号：US20190189401A1

公开(公告)日：2019-06-20

申请号：US15847411

申请日：2017-12-19

Applicant: Applied Materials, Inc.

Inventor： Saravjeet Singh ,  Kenneth D. Schatz ,  Alan Tso ,  Marlin Wijekoon ,  Dimitri Kioussis

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32862 ,  H01J2237/3323 ,  H01J2237/3344 ,  H01J2237/335 ,  H01L21/02049 ,  H01L21/02274 ,  H01L21/31116

Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.

公开(公告)号：US20210265134A1

公开(公告)日：2021-08-26

申请号：US17157224

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Saravjeet Singh ,  Kenneth D. Schatz ,  Alan Tso ,  Marlin Wijekoon ,  Dimitri Kioussis

IPC: H01J37/32 ,  H01L21/02

Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.

公开(公告)号：US08728918B2

公开(公告)日：2014-05-20

申请号：US13656420

申请日：2012-10-19

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Rongping Wang ,  Alan Tso

IPC: H01L21/20

CPC classification number: H01L21/0257 ,  C23C16/24 ,  C23C16/44 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32577 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and the processing region, a radio frequency power source coupled to the gas distribution showerhead, and one or more VHF grounding straps electrically coupled to at least one of the plurality of walls. The VHF grounding straps provide a low-impedance current path between at least one of the plurality of walls and at least one of a shadow frame or the substrate support. The method further includes delivering a semiconductor precursor gas and a dopant precursor gas and delivering a very high frequency (VHF) power to generate a plasma to form a first layer on the one or more substrates.

Abstract translation: 一种用于在等离子体增强化学气相沉积（PECVD）装置内制造半导体层的方法。 PECVD装置包括限定处理区域的多个壁，基板支撑件，阴影框架，气体分配喷头，与气体分配喷头和处理区域流体连通的气体源，耦合到 气体分配喷头和与多个壁中的至少一个电连接的一个或多个VHF接地带。 VHF接地带在多个壁中的至少一个和阴影框架或衬底支撑件中的至少一个之间提供低阻抗电流路径。 该方法还包括传输半导体前体气体和掺杂剂前体气体并输送非常高频（VHF）的功率以产生等离子体以在一个或多个基底上形成第一层。

公开(公告)号：US20130102133A1

公开(公告)日：2013-04-25

申请号：US13656420

申请日：2012-10-19

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Rongping Wang ,  Alan Tso

IPC: H01L21/02

CPC classification number: H01L21/0257 ,  C23C16/24 ,  C23C16/44 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32577 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and the processing region, a radio frequency power source coupled to the gas distribution showerhead, and one or more VHF grounding straps electrically coupled to at least one of the plurality of walls. The VHF grounding straps provide a low-impedance current path between at least one of the plurality of walls and at least one of a shadow frame or the substrate support. The method further includes delivering a semiconductor precursor gas and a dopant precursor gas and delivering a very high frequency (VHF) power to generate a plasma to form a first layer on the one or more substrates.

Abstract translation: 一种用于在等离子体增强化学气相沉积（PECVD）装置内制造半导体层的方法。 PECVD装置包括限定处理区域的多个壁，基板支撑件，阴影框架，气体分配喷头，与气体分配喷头和处理区域流体连通的气体源，耦合到 气体分配喷头和与多个壁中的至少一个电连接的一个或多个VHF接地带。 VHF接地带在多个壁中的至少一个和阴影框架或衬底支撑件中的至少一个之间提供低阻抗电流路径。 该方法还包括传输半导体前体气体和掺杂剂前体气体并输送非常高频（VHF）的功率以产生等离子体以在一个或多个基底上形成第一层。

公开(公告)号：US12148597B2

公开(公告)日：2024-11-19

申请号：US18168467

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Saravjeet Singh ,  Kenneth D. Schatz ,  Alan Tso ,  Marlin Wijekoon ,  Dimitri Kioussis

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311

Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.

公开(公告)号：US11637002B2

公开(公告)日：2023-04-25

申请号：US14554250

申请日：2014-11-26

Applicant: Applied Materials, Inc.

Inventor： Saravjeet Singh ,  Alan Tso ,  Jingchun Zhang ,  Zihui Li ,  Hanshen Zhang ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67

Abstract: A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.