Invention Grant
- Patent Title: Semiconductor nitridation passivation
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Application No.: US16723557Application Date: 2019-12-20
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Publication No.: US11189484B2Publication Date: 2021-11-30
- Inventor: Russell A. Benson , Silvia Borsari , Vinay Nair , Ying Rui , Somik Mukherjee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3213 ; H01L21/311

Abstract:
Methods, apparatuses, and systems related to a semiconductor nitridation passivation are described. An example method includes performing a dry etch process on a semiconductor structure on a wafer in a semiconductor fabrication process. The method further includes performing a dry strip process on the semiconductor structure. The method further includes performing a first wet strip clean process on the semiconductor. The method further includes performing a second wet strip clean process on the semiconductor. The method further includes performing a nitridation passivation on the semiconductor structure to avoid oxidization of the semiconductor structure. The method further performing a spacer material deposition on the semiconductor structure.
Public/Granted literature
- US20210193460A1 SEMICONDUCTOR NITRIDATION PASSIVATION Public/Granted day:2021-06-24
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