- 专利标题: Hermetic metallized via with improved reliability
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申请号: US16376467申请日: 2019-04-05
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公开(公告)号: US11152294B2公开(公告)日: 2021-10-19
- 发明人: Tian Huang , Mandakini Kanungo , Ekaterina Aleksandrovna Kuksenkova , Prantik Mazumder , Chad Byron Moore , Chukwudi Azubuike Okoro , Ah-Young Park , Scott Christopher Pollard , Rajesh Vaddi
- 申请人: Corning Incorporated
- 申请人地址: US NY Corning
- 专利权人: Corning Incorporated
- 当前专利权人: Corning Incorporated
- 当前专利权人地址: US NY Corning
- 代理商 Amy T. Lang; John P. McGroarty
- 主分类号: H01L23/15
- IPC分类号: H01L23/15 ; H01L23/48 ; H01L23/492 ; H01L23/498 ; H05K1/02 ; H05K1/03 ; H05K1/11 ; C03C15/00 ; C23C18/38 ; H01L21/768 ; H05K3/38 ; C23C14/18 ; C23C28/02 ; C03C17/06 ; C03C3/06 ; C03C23/00 ; C03C17/00 ; H05K3/42 ; C25D7/12 ; C03C3/076 ; H01L21/48 ; H01L23/00 ; H05K3/00
摘要:
An article includes a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and at least one via extending through the substrate from the first major surface to the second major surface over an axial length in an axial dimension. The article also includes a metal connector disposed within the via that hermetically seals the via. The article has a helium hermeticity of less than or equal to 1.0×10−8 atm-cc/s after 1000 thermal shock cycles, each of the thermal shock cycle comprises cooling the article to a temperature of −40° C. and heating the article to a temperature of 125° C., and the article has a helium hermeticity of less than or equal to 1.0×10−8 atm-cc/s after 100 hours of HAST at a temperature of 130° C. and a relative humidity of 85%.
公开/授权文献
- US20190313524A1 HERMETIC METALLIZED VIA WITH IMPROVED RELIABILITY 公开/授权日:2019-10-10
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