Invention Grant
- Patent Title: Interconnection structure and manufacturing method thereof
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Application No.: US16709934Application Date: 2019-12-11
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Publication No.: US11127675B2Publication Date: 2021-09-21
- Inventor: Min-Shiang Hsu , Yu-Han Tsai , Chih-Sheng Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201911153512.0 20191122
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768

Abstract:
An interconnection structure includes a first interlayer dielectric layer, a first conductive line, a protection layer, a second interlayer dielectric layer, and a connection plug. The first conductive line is partially disposed in the first interlayer dielectric layer. The protection layer is disposed on the first conductive line and the first interlayer dielectric layer. The protection layer covers a top surface and a sidewall of the first conductive line. The protection layer includes a recess disposed corresponding to the first conductive line in a vertical direction. The second interlayer dielectric layer is disposed on the protection layer. The connection plug penetrates at least a part of the second interlayer dielectric layer and the protection layer for being connected with the first conductive line.
Public/Granted literature
- US20210159170A1 INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-05-27
Information query
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