- 专利标题: Semiconductor image detector having redundant memory and/or memory bypass
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申请号: US16074277申请日: 2016-02-26
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公开(公告)号: US11122221B2公开(公告)日: 2021-09-14
- 发明人: Peiyan Cao , Huabin Cheng , Yurun Liu
- 申请人: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
- 申请人地址: CN Shenzhen
- 专利权人: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
- 当前专利权人: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Shenzhen
- 代理机构: IPro, PLLC
- 代理商 Qian Gu
- 国际申请: PCT/CN2016/074663 WO 20160226
- 国际公布: WO2017/143584 WO 20170831
- 主分类号: G11C29/24
- IPC分类号: G11C29/24 ; G01T1/24 ; H04N5/32 ; H04N5/3745 ; G11C29/04
摘要:
Disclosed herein is an apparatus suitable for detecting an image, comprising: a plurality of pixels configured to generate an electric signal upon exposure to a radiation; an electronics system associated with each of the pixels, wherein the electronics system comprises a first memory on a first signal path and a second memory on a second signal path, both signal paths being between an input terminal and an output terminal of the electronics system; wherein each of the first memory and the second memory is configured to store the electric signal generated by the pixel the electronics system is associated with, configured to store the electric signal generated in another pixel, and configured to transmit the electric signal stored in the electronics system to another pixel; wherein the electronics system comprises a switch configured to select one of the signal paths.
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