- 专利标题： MRAM fabrication and device
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申请号： US16559207申请日： 2019-09-03
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公开(公告)号： US11107980B2公开(公告)日： 2021-08-31
- 发明人: Jung-Tang Wu , Wu Meng Yu , Szu-Hua Wu , Chin-Szu Lee , Han-Ting Tsai , Yu-Jen Chien
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L43/12
- IPC分类号： H01L43/12 ; H01L27/22 ; H01F10/32 ; H01F41/34 ; G11C11/16 ; H01L43/02
摘要：
A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
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