- 专利标题： Method of forming multi-threshold voltage devices using dipole-high dielectric constant combinations and devices so formed
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申请号： US16942762申请日： 2020-07-29
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公开(公告)号： US11069576B2公开(公告)日： 2021-07-20
- 发明人: Wei-E Wang
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Van Pelt, Yi & James LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/28 ; H01L29/51 ; H01L29/49 ; H01L27/088
摘要：
A method provides a gate structure for a plurality of components of a semiconductor device. The method provides a first dipole combination on a first portion of the components. The first dipole combination includes a first dipole layer and a first high dielectric constant layer on the first dipole layer. A second dipole combination is provided on a second portion of the components. The second dipole combination includes a second dipole layer and a second high dielectric constant layer on the second dipole layer. The first dipole combination is different from the second dipole combination. At least one work function metal layer is provided on the first dipole combination and the second dipole combination. A low temperature anneal is performed after the step of providing the work function metal layer(s). A contact metal layer is formed on the work function metal layer.
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