发明授权
- 专利标题： Semiconductor structure with capacitor landing pad and method of making the same
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申请号： US15889182申请日： 2018-02-05
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公开(公告)号： US11049863B2公开(公告)日： 2021-06-29
- 发明人: Li-Wei Feng , Shih-Fang Tzou , Chien-Ting Ho , Ying-Chiao Wang , Yu-Ching Chen , Hui-Ling Chuang , Kuei-Hsuan Yu
- 申请人： UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- 申请人地址： TW Hsin-Chu; CN Quanzhou
- 专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu; CN Quanzhou
- 代理商 Winston Hsu
- 优先权： CN201710102423.8 20170224
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
A semiconductor structure with a capacitor landing pad includes a substrate. A capacitor contact plug is disposed on the substrate. A capacitor landing pad contacts and electrically connects the capacitor contact plug. A bit line is disposed on the substrate. A dielectric layer surrounds the capacitor landing pad. The dielectric layer includes a bottom surface lower than a top surface of the bit line.
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