- 专利标题： Semiconductor device and methods of manufacturing thereof
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申请号： US16584594申请日： 2019-09-26
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公开(公告)号： US11049767B2公开(公告)日： 2021-06-29
- 发明人: Tsai-Ming Huang , Wei-Chieh Huang , Hsun-Chung Kuang , Yen-Chang Chu , Cheng-Che Chung , Chin-Wei Liang , Ching-Sen Kuo , Jieh-Jang Chen , Feng-Jia Shiu , Sheng-Chau Chen
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/768 ; H01L21/02 ; H01L21/3105 ; H01L21/321 ; H01L23/544 ; H01L23/522
摘要：
In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a chemical mechanical polishing (CMP) stop layer is formed over the first ILD layer, a trench is formed by patterning the CMP stop layer and the first ILD layer, a metal layer is formed over the CMP stop layer and in the trench, a sacrificial layer is formed over the metal layer, a CMP operation is performed on the sacrificial layer and the metal layer to remove a portion of the metal layer over the CMP stop layer, and a remaining portion of the sacrificial layer over the trench is removed.
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