- 专利标题: Shunt power rail with short line effect
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申请号: US16362417申请日: 2019-03-22
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公开(公告)号: US11038344B2公开(公告)日: 2021-06-15
- 发明人: John Jianhong Zhu , Xiangdong Chen , Haining Yang , Kern Rim
- 申请人: QUALCOMM Incorporated
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理机构: Qualcomm Incorporated
- 主分类号: H02H9/04
- IPC分类号: H02H9/04 ; H02J7/00 ; H01Q1/22
摘要:
A cell circuit includes a first power rail, having a first line length, in a first layer. The first power rail is configured to receive a first voltage for the cell circuit. The cell circuit includes multiple lines in a second layer and a shunt in a third layer. The shunt is electrically coupled to the first power rail and a first set of lines of the multiple lines. The shunt has a second line length shorter than the first line length. The cell circuit includes another shunt in t the third layer. The other shunt is also parallel to the first power rail. The other shunt is electrically coupled to the first power rail and a second set of lines of the multiple lines. The other shunt has a third line length shorter than the first line length.
公开/授权文献
- US20200044440A1 SHUNT POWER RAIL WITH SHORT LINE EFFECT 公开/授权日:2020-02-06
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