- 专利标题： Semiconductor structure and method for manufacturing the same
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申请号： US16251841申请日： 2019-01-18
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公开(公告)号： US11031300B2公开(公告)日： 2021-06-08
- 发明人: Sung-Li Wang , Peng-Wei Chu , Yasutoshi Okuno
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT, P.C. Intellectual Property Attorneys
- 代理商 Anthony King
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/092 ; H01L29/66 ; H01L21/324 ; H01L29/08 ; H01L21/02 ; H01L29/78
摘要：
A method for manufacturing a semiconductor structure is provided. The method includes: receiving a substrate having a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type; introducing an agent onto the first epitaxy region and the second epitaxy region, wherein the agent is selectively deposited to the second epitaxy region; selectively depositing a first metal layer on the first epitaxy region; and depositing a second metal layer on the first epitaxy region and the second epitaxy region. A semiconductor structure according to the method is also provided.
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