Invention Grant
- Patent Title: Methods of manufacturing semiconductor devices
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Application No.: US16407700Application Date: 2019-05-09
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Publication No.: US10991574B2Publication Date: 2021-04-27
- Inventor: Ji-woon Park , Jin-su Lee , Hyung-suk Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0118139 20181004
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/04 ; H01L21/768 ; H01L21/285 ; H01L49/02
Abstract:
A method of manufacturing a semiconductor device includes forming a three-dimensional (3D) structure on a substrate, forming an adsorption control layer to cover an upper portion of the 3D structure, and forming a material layer on the adsorption control layer and on a lower portion of the 3D structure that is not covered by the adsorption control layer, wherein a minimum thickness of the material layer on the adsorption control layer is less than a maximum thickness of the material layer on the lower portion of the 3D structure.
Information query
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