Invention Grant
- Patent Title: Bi-polar write scheme
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Application No.: US16598568Application Date: 2019-10-10
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Publication No.: US10991410B2Publication Date: 2021-04-27
- Inventor: Neal Berger , Benjamin Louie , Kadriye Deniz Bozdag
- Applicant: Spin Memory, Inc.
- Applicant Address: US CA Fremont
- Assignee: Spin Memory, Inc.
- Current Assignee: Spin Memory, Inc.
- Current Assignee Address: US CA Fremont
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G06F12/0855 ; H01L25/065

Abstract:
A method of writing data into a memory device is disclosed. The method comprises utilizing a pipeline to process write operations of a first plurality of data words addressed to a memory bank and writing a second plurality of data words and associated memory addresses into an error buffer. The method also comprises monitoring a first counter value which tracks a number of write 1 errors and a second counter value which tracks a number of write 0 errors in the memory bank. Further, the method comprises determining if the first counter value and the second counter value have exceeded a predetermined threshold. Responsive to a determination that the first counter value has exceeded the predetermined threshold increasing a write 1 voltage of the memory bank, and, further, responsive to a determination that the second counter value has exceeded the predetermined threshold increasing a write 0 voltage of the memory bank.
Public/Granted literature
- US20200043540A1 BI-POLAR WRITE SCHEME Public/Granted day:2020-02-06
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