- 专利标题： Method of forming a thermal shield in a monolithic 3-D integrated circuit
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申请号： US16374524申请日： 2019-04-03
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公开(公告)号： US10971420B2公开(公告)日： 2021-04-06
- 发明人: Wei-E Wang , Mark S. Rodder , Vassilios Gerousis
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Lewis Roca Rothgerber Christie LLP
- 主分类号： H01L23/367
- IPC分类号： H01L23/367 ; H01L23/373 ; H01L23/522 ; H01L25/065 ; H01L27/06
摘要：
A monolithic three-dimensional integrated circuit including a first device, a second device on the first device, and a thermal shield stack between the first device and the second device. The thermal shield stack includes a thermal retarder portion having a low thermal conductivity in a vertical direction, and a thermal spreader portion having a high thermal conductivity in a horizontal direction. The thermal shield stack of the monolithic three-dimensional integrated circuit includes only dielectric materials.
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