- 专利标题： Control circuit, semiconductor memory device, information processing device, and control method
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申请号： US16490159申请日： 2018-02-14
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公开(公告)号： US10971197B2公开(公告)日： 2021-04-06
- 发明人: Hiroyuki Tezuka
- 申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 申请人地址： JP Kanagawa
- 专利权人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 当前专利权人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 当前专利权人地址： JP Kanagawa
- 代理机构： Chip Law Group
- 优先权： JP2017-045014 20170309
- 国际申请： PCT/JP2018/005125 WO 20180214
- 国际公布： WO2018/163737 WO 20180913
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C7/08 ; G11C7/14 ; G11C11/16
摘要：
To provide a control circuit capable of reliably generating a reference potential while suppressing increase in power consumption and cost. Provided is a control circuit that performs control to separate from a sense amplifier a second reference element set to a predetermined resistance state, which is different from a first reference element set to a predetermined resistance state and connected to the sense amplifier in generating a reference potential used for data read through the sense amplifier from a memory cell.
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