Invention Grant
- Patent Title: Redistribution substrate, method of fabricating the same, and semiconductor package including the same
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Application No.: US16351709Application Date: 2019-03-13
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Publication No.: US10950539B2Publication Date: 2021-03-16
- Inventor: Jongyoun Kim , Seokhyun Lee , Minjun Bae
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0109695 20180913
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/00 ; H01L23/31 ; H01L23/528 ; H01L21/56 ; H01L21/768

Abstract:
A redistribution subtrate, a method of fabricating the same, and a semiconductor package are provided. The method including forming a first conductive pattern; forming a first photosensitive layer on the first conductive pattern, the first photosensitive layer having a first through hole exposing a first portion of the first conductive pattern; forming a first via in the first through hole; removing the first photosensitive layer; forming a first dielectric layer that encapsulates the first conductive pattern and the first via, the first dielectric layer exposing a top surface of the first via; and forming a second conductive pattern on the top surface of the first via.
Public/Granted literature
- US20200091066A1 REDISTRIBUTION SUBSTRATE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME Public/Granted day:2020-03-19
Information query
IPC分类: