- 专利标题： Semiconductor device structure comprising a plurality of metal oxide fibers and method for forming the same
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申请号： US16213788申请日： 2018-12-07
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公开(公告)号： US10943873B2公开(公告)日： 2021-03-09
- 发明人: Jing-Cheng Lin , Chen-Hua Yu , Szu-Wei Lu , Yen-Yao Chi
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L21/02 ; H01L23/31 ; H01L21/56 ; H01L21/768 ; H01L21/3205 ; H01L21/48 ; H01L23/528 ; H01L23/538 ; H01L25/10 ; H01L33/62 ; H01L23/532 ; H01L25/00 ; H01L23/525
摘要：
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a conductive structure over the substrate. The semiconductor device structure includes first metal oxide fibers over the conductive structure. The semiconductor device structure includes a dielectric layer over the substrate and covering the conductive structure and the first metal oxide fibers. The dielectric layer fills gaps between the first metal oxide fibers.
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