- 专利标题： Charge pump circuit, semiconductor device, and semiconductor memory device
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申请号： US16743324申请日： 2020-01-15
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公开(公告)号： US10938301B2公开(公告)日： 2021-03-02
- 发明人: Hiroki Murakami
- 申请人： Winbond Electronics Corp.
- 申请人地址： TW Taichung
- 专利权人： Winbond Electronics Corp.
- 当前专利权人： Winbond Electronics Corp.
- 当前专利权人地址： TW Taichung
- 代理机构： Muncy, Geissler, Olds & Lowe, P.C.
- 优先权： JPJP2019-012678 20190129
- 主分类号： G11C5/14
- IPC分类号： G11C5/14 ; H02M3/07 ; G11C16/30
摘要：
A charge pump circuit that suppresses low boost efficiency is provided. The charge pump circuit 100 of the invention includes a main pump circuit CPn_M and a gate controlling pump circuit CPn_G controlling the main pump circuit CPn_M. The main pump circuit has the same basic configuration as the controlling pump circuit, which are both KER-type pump circuits. The controlling pump circuit controls the operation of a transistor of the main pump circuit after the main pump circuit is boosted, so that reverse current will not flow from the main pump circuit to the forward section of the pump circuit.
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